inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD1210 description high dc current gain : h fe = 1000(min.)@ i c = 10a collector-emitter sustaining voltage- : v ceo(sus) = 100v(min) applications designed for audio frequency power amplifier and low speed high current sw itching industrial use. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 150 v v ceo collector-emitter voltage 100 v v ebo emitter-base voltage 8 v i c collector current-continuous 10 a i cm collector current-peak 20 a i b b base current- continuous 1 a collector power dissipation @t a =25 3 p c collector power dissipation @t c =25 80 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD1210 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ce (sat) collector-emitter saturation voltage i c = 10a, i b = 25ma 1.5 v v be (sat) base-emitter saturation voltage i c = 10a, i b = 25ma 2.0 v i cbo collector cutoff current v cb = 100v, i e = 0 10 a i ebo emitter cutoff current v eb = 8v; i c = 0 5 ma h fe dc current gain i c = 10a; v ce = 2v 1000 switching times t on turn-on time 1.0 s t stg storage time 5.0 s t f fall time i c = 10a,i b1 = -i b2 = 25ma; r l = 5 ;v cc 50v 2.0 s isc website www.iscsemi.cn
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